The solenoid can go bad and you can bench test it with 12v. Contacts of the seat switch to pin “9” of TDC module 2-pin connector (X14). Inside the TDC module, current flows through seat time delay integrated circuit (IC) (E), then to seat time delay transistor (D). As long as current from the time delay IC flows to the transistor, the. FLUIDA STATIS MODUL FISIKA SMA XI 25Untuk benda berbentuk bola, maka persamaannya menjadi seperti berikut:w = Fs + FAw FA =Fs34. G –34r3f g = 6 r v34. R3g ( b – f) = 6 r v32r2g ( b – f) = 3 v=92r2g (vρρ cb), disebut persamaan viskositas fluida.Sedangkan persamaan kecepatannya adalah sebagai berikut.v =92r2g (ηρρ cb) 26.
To drive a DC motor you need a larger amount of current than Arduino board can give. For that reason you must use a transistor. Transistors have limits and maximum specs, just be sure those values are enough for your use.The transistor we are using for this tutorial is P2N2222A and is rated at 40V and 200mA, it just perfect for one toy dc motor.Note: If your motor needs more current than 200mA you can just buy another transistor (ask the staff in the electronics store). The connections below are the same;-)In this tutorial we will spin a dc motor from one direction, with different speed.
You will be able to control motor speed from serial monitor!So, let's get started!
Type Designator: 2N7000
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.4 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 40 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 0.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 1.7 nC
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO226
2N7000 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7000 Datasheet (PDF)
1.1. tsm2n7000kct.pdf Size:181K _update_mosfet
TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(Ω) ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ● Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk
1.2. 2n7000r3.pdf Size:77K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29–04, STYLE 22 Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO–92 (TO–226AA) Gate–Source Voltage — Continuous VGS ±20 Vd
1.3. 2n7000-03.pdf Size:274K _philips
2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible. 3. Applications Relay driver
1.4. 2n7000 2n7002.pdf Size:626K _st
2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 ¦ Low Qg ¦ Low threshold drive SOT23-3L TO-92 Application ¦ Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectron
1.5. 2n7000bu.pdf Size:85K _fairchild_semi
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous
1.6. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and
1.7. 2n7000ta.pdf Size:84K _fairchild_semi
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Contin
1.8. 2n7000.pdf Size:94K _fairchild_semi
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and
1.9. 2n7000.pdf Size:443K _samsung
The actual developer of the free software is Snell. The following versions: 10.0, 4.4 and 3.8 are the most frequently downloaded ones by the program users. This PC program is suitable for 32-bit versions of Windows XP. Commtrol.exe, Rollcall.exe and RollCall6.exe are the most frequent filenames for this program's installer. Roll call Software - Free Download roll call - Top 4 Download - Top4Download.com offers free software downloads for Windows, Mac, iOS and Android computers and mobile devices. Visit for free, full and secured software’s. Roll Call for Daxko Operations allows staff or parents at child care locations to check children into and out of child care and camp programs. Planet roll call rar software download. It also offers Roll Call on the Cloud, a cloud version wherein the primary software is installed on the local system and the entire data is hosted in the Roll Call cloud. Roll Call offers child check-in functionality to check the location of students and the classes they are taking within the church premises.
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Curren
1.10. 2n7000kl bs170kl.pdf Size:93K _vishay
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free • ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lam
1.11. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Lo
1.12. 2n7000g.pdf Size:92K _onsemi
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable 60 VOLTS • This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetiti
1.13. 2n7000z.pdf Size:150K _utc
UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is part
1.14. 2n7000.pdf Size:355K _utc
UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low volta
1.15. 2n7000k.pdf Size:201K _auk
2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packag
1.16. 2n7000.pdf Size:358K _secos
2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A
1.17. tsm2n7000.pdf Size:85K _taiwansemi
1.18. 2n7000k.pdf Size:67K _kec
2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H
1.19. 2n7000a.pdf Size:61K _kec
2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85
1.20. 2n7000.pdf Size:63K _kec
2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RA
1.21. 2n7000.pdf Size:199K _inchange_semiconductor
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a
1.22. 2n7000.pdf Size:239K _lge
2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 2
1.23. 2n7000.pdf Size:168K _wietron
WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source
1.24. h2n7000.pdf Size:51K _hsmc
Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Tempera
1.25. st2n7000.pdf Size:566K _semtech
ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 MΩ) VDGR 60 V Gate-source Voltage Continuous VGS ± 20 V VGSM ± 40 V Non-repetitive ( tp ≤ 50 μs) Drain Current Continuous
1.26. h2n7000.pdf Size:423K _shantou-huashan
H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow
Datasheet: 2N6967JANTX, 2N6967JANTXV, 2N6968, 2N6968JANTX, 2N6968JANTXV, 2N6969, 2N6969JANTX, 2N6969JANTXV, IRF630, 2N7000P, 2N7001, 2N7002, 2N7002L, 2N7004, 2N7005, 2N7006, 2N7007.
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